SIHF8N50D-E3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SIHF8N50D-E3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-ren3

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3D Models

SIHF8N50D-E3 - Vishay - 3D model - Transistor Outline, Vertical - TO-220-ren3

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SIHF8N50D-E3
Part Number SIHF8N50D-E3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - TO-220-ren3
Released Date Nov 5, 2019
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SIHF8N50D-E3 Details

Manufacturer Part Number:
SIHF8N50D-E3
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Package Description:
TO-220, 3 PIN
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Avalanche Energy Rating (Eas):
29 mJ
Case Connection:
ISOLATED
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
500 V
Drain Current-Max (ID):
8.7 A
Drain-source On Resistance-Max:
0.85 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
NOT SPECIFIED
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
33 W
Pulsed Drain Current-Max (IDM):
18 A
Surface Mount:
NO
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
NOT SPECIFIED
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SIHF8N50D-E3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SIHF8N50D-E3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux compatible with the component's lead finish. Avoid overheating or applying excessive force, which can damage the component.
The maximum allowed voltage derating for SIHF8N50D-E3 is 80% of the maximum rated voltage (500V) at an operating temperature of 150°C. This means the maximum allowed voltage is 400V at 150°C.
While the SIHF8N50D-E3 is suitable for high-frequency switching applications, its performance may degrade above 100 kHz due to increased switching losses. It's recommended to evaluate the component's performance in your specific application and consider alternative components if necessary.
To calculate the thermal resistance of the SIHF8N50D-E3, you need to consider the component's junction-to-case thermal resistance (RθJC), case-to-sink thermal resistance (RθCS), and sink-to-ambient thermal resistance (RθSA). Use the following formula: RθJA = RθJC + RθCS + RθSA. Consult the datasheet and application notes for more information.

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SIHF8N50D-E3 - Vishay

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SIHF8N50D-E3 Frequently Asked Questions (FAQs)

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