SIHFPS38N60L-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SIHFPS38N60L-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-274AA (High Voltage)

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3D Models

SIHFPS38N60L-GE3 - Vishay - 3D model - Transistor Outline, Vertical - TO-274AA (High Voltage)

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Datasheet Download Datasheet
Stock & Prices Price & Stock for SIHFPS38N60L-GE3
Part Number SIHFPS38N60L-GE3
Manufacturer Vishay
Pin Count 3
Part Category MOSFET (N-Channel)
Package Category Transistor Outline, Vertical
Footprint Name Transistor Outline, Vertical - TO-274AA (High Voltage)
Released Date Mar 31, 2023
Last Modified Date Mar 31, 2023 11:13 AM UTC
Pinout / Pin List Click Here (Member Only)

SIHFPS38N60L-GE3 Details

Manufacturer Part Number:
SIHFPS38N60L-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Obsolete
Package Description:
TO-274, 3 PIN
ECCN Code:
EAR99
Manufacturer:
Vishay Intertechnologies
YTEOL:
0
Avalanche Energy Rating (Eas):
680 mJ
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
600 V
Drain Current-Max (ID):
38 A
Drain-source On Resistance-Max:
0.15 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss):
72 pF
JEDEC-95 Code:
TO-247AA
JESD-30 Code:
R-PSIP-X3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
IN-LINE
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
540 W
Pulsed Drain Current-Max (IDM):
150 A
Surface Mount:
NO
Terminal Form:
UNSPECIFIED
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SIHFPS38N60L-GE3 Frequently Asked Questions (FAQs)

The recommended PCB footprint for SIHFPS38N60L-GE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux compatible with the component's lead-free finish. Avoid overheating or applying excessive force, which can damage the component.
The maximum allowed voltage derating for SIHFPS38N60L-GE3 is 10% of the maximum rated voltage (600V) at temperatures above 150°C. This means the maximum allowed voltage at 150°C is 540V.
Yes, the SIHFPS38N60L-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the component's switching losses, gate charge, and thermal performance when designing the application.
To calculate the thermal resistance, you need to consider the component's junction-to-case thermal resistance (RθJC), case-to-sink thermal resistance (RθCS), and sink-to-ambient thermal resistance (RθSA). Use the following formula: RθJA = RθJC + RθCS + RθSA. Consult the datasheet and application notes for more information.

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SIHFPS38N60L-GE3 - Vishay

SIHFPS38N60L-GE3 Details

SIHFPS38N60L-GE3 Frequently Asked Questions (FAQs)

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