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SIHFR120-GE3 - Vishay

Description: MOSFET 100V N-CH

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SIHFR120-GE3 - Vishay - PCB symbol
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SIHFR120-GE3 - Vishay PCB footprint - Other - Other - SIHFR120-GE3
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SIHFR120-GE3 Details

  • Manufacturer Part Number:

    SIHFR120-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    7.7 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    34 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    31 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFR120-GE3 Frequently Asked Questions (FAQs)

  • Vishay recommends a PCB layout with a large copper area connected to the drain pin to dissipate heat efficiently. A minimum of 1 oz copper thickness is recommended, and the use of thermal vias can further improve heat dissipation.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended derating curves for the device. Additionally, consider using a heat sink or thermal interface material to reduce the junction temperature, and ensure proper airflow around the device.
  • The SIHFR120-GE3 has an internal ESD protection diode, but it's still recommended to follow standard ESD handling procedures when handling the device. A human body model (HBM) of 2 kV and a machine model (MM) of 200 V are recommended for ESD protection.
  • Yes, the SIHFR120-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and PCB layout to minimize parasitic inductance and capacitance.
  • The recommended gate drive voltage is 10-15 V, and the recommended gate drive current is 1-2 A. A gate drive circuit with a low output impedance and a fast rise time (less than 10 ns) is recommended to ensure reliable switching.

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SIHFR120-GE3 Overview

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SIHFR120-GE3 Alternates

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Part Image IRFR120TRLPBF Vishay Intertechnologies

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Part Image IRFR120 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image IRFR120 Samsung Semiconductor

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For a full list of alternate parts for SIHFR120-GE3, check out Findchips.com