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SIHFR9120-GE3 - Vishay

Description: MOSFET -100V Vds 20V Vgs DPAK (TO-252)

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SIHFR9120-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHFR9120-GE3 - Vishay PCB footprint - Other - Other - TO-252AA_1
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3D Models
SIHFR9120-GE3 - Vishay - 3D model - Other - TO-252AA_1
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SIHFR9120-GE3 Details

  • Manufacturer Part Number:

    SIHFR9120-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    30 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.4

  • Avalanche Energy Rating (Eas):

    210 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-252AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    22 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFR9120-GE3 Frequently Asked Questions (FAQs)

  • Vishay recommends a PCB layout with a large copper area connected to the tab of the device to improve thermal dissipation. A minimum of 1 oz copper thickness is recommended, and the use of thermal vias can further enhance heat transfer.
  • To ensure reliable soldering, follow the recommended soldering profile: peak temperature of 260°C, time above 217°C of 20-40 seconds, and a maximum of 3 reflows. Use a solder with a melting point above 217°C, and avoid using solder with a high silver content.
  • The maximum allowed voltage imbalance between the input and output is ±10% of the nominal input voltage. Exceeding this limit may affect the device's reliability and performance.
  • While the SIHFR9120-GE3 is designed to operate in a wide range of temperatures, it is not recommended for use in high-humidity environments (>80% RH) without proper protection. Consider using conformal coating or potting to prevent moisture ingress.
  • Store the SIHFR9120-GE3 in a dry, cool place (<30°C, <60% RH) away from direct sunlight. Avoid storing the devices in close proximity to sources of moisture, chemicals, or radiation.

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SIHFR9120-GE3 Overview

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SIHFR9120-GE3 Alternates

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Image Part Number Model
Part Image SIHFR9120TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image IRFR9120 Intersil Corporation

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image IRFR9120TRL Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Part Image IRFR9120TRL Vishay Intertechnologies

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Part Image IRFR9120 Vishay Siliconix

Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
For a full list of alternate parts for SIHFR9120-GE3, check out Findchips.com