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SIHFR9310TR-GE3 - Vishay

Description: P-Channel 400 V 1.8A (Tc) 50W (Tc) Surface Mount TO-252AAP-Channel 400 V 1.8A (Tc) 50W (Tc) Surface Mount TO-252AA

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SIHFR9310TR-GE3 - Vishay PCB footprint - Other - Other - SIHFR9310TR-GE3-3
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SIHFR9310TR-GE3 Details

  • Manufacturer Part Number:

    SIHFR9310TR-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    92 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    1.8 A

  • Drain-source On Resistance-Max:

    7 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    50 W

  • Pulsed Drain Current-Max (IDM):

    7.2 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFR9310TR-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIHFR9310TR-GE3 is a pad layout with a minimum size of 2.5 mm x 2.5 mm, with a 1.5 mm x 1.5 mm thermal pad in the center, and a 0.5 mm keep-out area around the component.
  • To ensure reliable soldering, use a soldering temperature of 260°C (max) for 10 seconds (max), and ensure the component is properly aligned with the PCB pads. Also, use a solder with a melting point above 217°C to prevent thermal damage.
  • The maximum operating temperature range for SIHFR9310TR-GE3 is -55°C to 175°C, with a maximum junction temperature of 175°C.
  • Handle SIHFR9310TR-GE3 with ESD-protective equipment, such as wrist straps, mats, and bags, to prevent electrostatic discharge damage. Also, ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays.
  • Store SIHFR9310TR-GE3 in a dry, cool place, away from direct sunlight, with a relative humidity of 50% or less, and at a temperature range of -40°C to 30°C.

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SIHFR9310TR-GE3 Overview

Use the download button to access the SIHFR9310TR-GE3 schematic symbol and PCB footprint.
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Part Image SIHFR9310TRL-GE3 Vishay Intertechnologies

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SIHFR9310TR-GE3 Vishay Siliconix

Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image SIHFR9310-GE3 Vishay Intertechnologies

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Part Image IRFR9310 Vishay Intertechnologies

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Part Image IRFR9310 Vishay Siliconix

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For a full list of alternate parts for SIHFR9310TR-GE3, check out Findchips.com