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SIHFU9220-GE3 - Vishay

Description: MOSFET -200V Vds 20V Vgs IPAK (TO-251)

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SIHFU9220-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1+
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3D Models
SIHFU9220-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1+
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SIHFU9220-GE3 Details

  • Manufacturer Part Number:

    SIHFU9220-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    8 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.8

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    310 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    14 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHFU9220-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIHFU9220-GE3 is a pad layout with a minimum size of 2.5 mm x 2.5 mm, with a 1.5 mm x 1.5 mm thermal pad in the center. This ensures proper heat dissipation and minimizes thermal resistance.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and apply a solder flux with a moderate activity level. Avoid using excessive solder or flux, as this can lead to bridging or contamination.
  • The maximum allowed voltage derating for the SIHFU9220-GE3 is 10% of the rated voltage. This means that if the device is rated for 200 V, the maximum allowed voltage derating would be 20 V.
  • Yes, the SIHFU9220-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal management, and PCB layout to ensure reliable operation.
  • To calculate the power dissipation of the SIHFU9220-GE3, use the following formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.

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SIHFU9220-GE3 Overview

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Part Image IRFU9220PBF Vishay Intertechnologies

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image SIHFU9220-GE3 Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image IRFU9220 Rochester Electronics LLC

3.6A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA

Part Image IRFU9220 Intersil Corporation

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU9220 Vishay Siliconix

Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

For a full list of alternate parts for SIHFU9220-GE3, check out Findchips.com