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SIHG15N60E-GE3 - Vishay

Description: MOSFET 600V Vds 30V Vgs TO-247AC

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SIHG15N60E-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_a
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3D Models
SIHG15N60E-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-247AC_a
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SIHG15N60E-GE3 Details

  • Manufacturer Part Number:

    SIHG15N60E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Date Of Intro:

    2016-05-17

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    102 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.28 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    39 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHG15N60E-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the SIHG15N60E-GE3 is 175°C.
  • Yes, the SIHG15N60E-GE3 is suitable for high-frequency switching applications due to its low gate charge and low output capacitance.
  • The recommended gate resistor value for the SIHG15N60E-GE3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the SIHG15N60E-GE3 can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable voltage transient for the SIHG15N60E-GE3 is 600V, but it is recommended to limit the voltage transient to 500V or less to ensure reliable operation.

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SIHG15N60E-GE3 Overview

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