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SIHG22N60E-E3 - Vishay

Description: N-Channel 600 V 21A (Tc) 227W (Tc) Through Hole TO-247AC

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SIHG22N60E-E3 - Vishay - PCB symbol
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PCB Footprints
SIHG22N60E-E3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 247 AC
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3D Models
SIHG22N60E-E3 - Vishay - 3D model - Transistor Outline, Vertical - TO 247 AC
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SIHG22N60E-E3 Details

  • Manufacturer Part Number:

    SIHG22N60E-E3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    367 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    21 A

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHG22N60E-E3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for SIHG22N60E-E3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the IGBT's reliability. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material if necessary. The heat sink should be designed to dissipate the maximum expected power loss, and the system should be designed to maintain a safe operating temperature.
  • The recommended gate resistor value depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 ohms and 100 ohms to ensure proper switching and minimize oscillations. However, it's recommended to consult the datasheet and application notes for more specific guidance.
  • Yes, the SIHG22N60E-E3 can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the system is designed to handle the increased current and power. Consult the datasheet and application notes for guidance on parallel operation.
  • The maximum allowable voltage transient for the SIHG22N60E-E3 is specified in the datasheet as 600 V. However, it's recommended to limit the voltage transient to 500 V or less to ensure reliable operation and minimize the risk of damage.

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SIHG22N60E-E3 Overview

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SIHG22N60E-E3 Alternates

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Part Image SIHG22N60E-E3 Vishay Siliconix

Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC