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SIHG25N40D-GE3 - Vishay

Description: Vishay SIHG25N40D-GE3 N-channel MOSFET Transistor, 25 A, 400 V, 3-Pin TO-247AC

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SIHG25N40D-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHG25N40D-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247AC_
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3D Models
SIHG25N40D-GE3 - Vishay - 3D model - Transistor Outline, Vertical - TO-247AC_
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SIHG25N40D-GE3 Details

  • Manufacturer Part Number:

    SIHG25N40D-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    556 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.17 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    278 W

  • Pulsed Drain Current-Max (IDM):

    78 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHG25N40D-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SIHG25N40D-GE3 is -40°C to 150°C, with a junction temperature (Tj) of up to 150°C.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using a thermal interface material, and maintaining a low thermal resistance between the module and the heat sink. Additionally, the heat sink should be designed to handle the maximum power dissipation of the module.
  • The recommended gate resistance for the SIHG25N40D-GE3 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistance can help reduce electromagnetic interference (EMI) but may increase switching losses.
  • Yes, the SIHG25N40D-GE3 can be used in a parallel configuration, but it's essential to ensure that the modules are matched in terms of their electrical characteristics and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
  • The maximum allowable voltage transient for the SIHG25N40D-GE3 is 1200 V, with a maximum dv/dt of 10 kV/μs. Exceeding these limits can cause damage to the module or affect its reliability.

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SIHG25N40D-GE3 Overview

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