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SIHG40N60E-GE3 - Vishay

Description: MOSFET 600V Vds 30V Vgs TO-247AC

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PCB Footprints
SIHG40N60E-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 247 AC
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3D Models
SIHG40N60E-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO 247 AC
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SIHG40N60E-GE3 Details

  • Manufacturer Part Number:

    SIHG40N60E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Date Of Intro:

    2016-05-10

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    691 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    123 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIHG40N60E-GE3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the SIHG40N60E-GE3 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the SIHG40N60E-GE3. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material if necessary. Also, consider using a fan or other cooling system to keep the temperature within the recommended range.
  • The recommended gate resistor value for the SIHG40N60E-GE3 is typically between 10 ohms and 100 ohms, depending on the specific application and switching frequency. A higher gate resistor value can help reduce electromagnetic interference (EMI), but may increase switching losses.
  • Yes, the SIHG40N60E-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, be aware that high-frequency switching can increase switching losses and reduce the device's overall efficiency.
  • To protect the SIHG40N60E-GE3 from overvoltage and overcurrent, consider using a voltage clamp or a surge protector to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or circuit breaker to detect and respond to overcurrent conditions.

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SIHG40N60E-GE3 Overview

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