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Part Image

SIHG80N60EF-GE3 - Vishay

Description: MOSFET 650V Vds; 30V Vgs TO-247AC

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PCB Footprints
SIHG80N60EF-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - to-247-ac
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3D Models
SIHG80N60EF-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - to-247-ac
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SIHG80N60EF-GE3 Details

  • Manufacturer Part Number:

    SIHG80N60EF-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    unknown

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    69 Weeks

  • Date Of Intro:

    2018-09-17

  • Manufacturer:

    Vishay Intertechnologies

  • Risk Rank:

    2.25

  • YTEOL:

    6.25

  • Avalanche Energy Rating (Eas):

    1142 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    8 pF

  • JEDEC-95 Code:

    TO-247AC

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    520 W

  • Pulsed Drain Current-Max (IDM):

    254 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    660 ns

  • Turn-on Time-Max (ton):

    305 ns

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SIHG80N60EF-GE3 Overview

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