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SIHH186N60EF-T1GE3 - Vishay

Description: MOSFET, N-CH, 600V, 16A, 150DEG C, 114W ROHS COMPLIANT: YES

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PCB Footprints
SIHH186N60EF-T1GE3 - Vishay PCB footprint - Other - Other - SIHH186N60EF-T1GE3-2
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3D Models
SIHH186N60EF-T1GE3 - Vishay  - 3D model - Other - SIHH186N60EF-T1GE3-2
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SIHH186N60EF-T1GE3 Details

  • Manufacturer Part Number:

    SIHH186N60EF-T1GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    20 Weeks

  • Date Of Intro:

    2019-06-27

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.193 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    S-PSSO-N4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    114 W

  • Pulsed Drain Current-Max (IDM):

    43 A

  • Surface Mount:

    YES

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    82 ns

  • Turn-on Time-Max (ton):

    74 ns

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SIHH186N60EF-T1GE3 Overview

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