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SIHP068N60EF-GE3 - Vishay

Description: MOSFET 600V N-CHANNEL

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PCB Footprints
SIHP068N60EF-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-1
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3D Models
SIHP068N60EF-GE3 - Vishay  - 3D model - Transistor Outline, Vertical - TO-220-1
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SIHP068N60EF-GE3 Details

  • Manufacturer Part Number:

    SIHP068N60EF-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    14 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    226 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    41 A

  • Drain-source On Resistance-Max:

    0.068 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    115 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    150 ns

  • Turn-on Time-Max (ton):

    137 ns

SIHP068N60EF-GE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for SIHP068N60EF-GE3 is -40°C to 150°C.
  • Yes, SIHP068N60EF-GE3 is designed for high-frequency switching applications up to 100 kHz.
  • The recommended gate resistance for SIHP068N60EF-GE3 is 10 ohms to 20 ohms.
  • Yes, SIHP068N60EF-GE3 can be used in a parallel configuration, but it requires careful consideration of thermal management and gate drive circuitry.
  • The maximum allowable voltage transient for SIHP068N60EF-GE3 is 600 V.

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SIHP068N60EF-GE3 Overview

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