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SIHP080N60E-GE3 - Vishay

Description: MOSFET N-CHANNEL 600V

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SIHP080N60E-GE3 - Vishay - PCB symbol
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PCB Footprints
SIHP080N60E-GE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB (High Voltage)
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3D Models
SIHP080N60E-GE3 - Vishay - 3D model - Transistor Outline, Vertical - TO-220AB (High Voltage)
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SIHP080N60E-GE3 Details

  • Manufacturer Part Number:

    SIHP080N60E-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    226 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    227 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    136 ns

  • Turn-on Time-Max (ton):

    206 ns

SIHP080N60E-GE3 Frequently Asked Questions (FAQs)

  • The thermal resistance from junction to case (RθJC) is typically around 0.5°C/W, but it can vary depending on the specific application and cooling conditions.
  • To ensure proper soldering, follow the recommended soldering profile and use a solder with a melting point above 217°C. Also, make sure the device is handled by trained personnel and stored in a dry, cool place.
  • The recommended gate resistor value depends on the specific application and switching frequency. A typical value is around 10-20 ohms, but it's recommended to consult the application note or contact Vishay support for more specific guidance.
  • The SIHP080N60E-GE3 is a commercial-grade device, but Vishay offers similar devices with higher reliability ratings, such as the SIHP080N60E-T1-GE3, which is qualified to aerospace standards. Contact Vishay support for more information.
  • To protect the device from ESD, handle it in an ESD-controlled environment, use ESD-protective packaging and materials, and follow proper handling and storage procedures. It's also recommended to use ESD protection devices, such as TVS diodes, in the circuit design.

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SIHP080N60E-GE3 Overview

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