- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for SIHP15N50E-BE3
- Part Number SIHP15N50E-BE3
- Manufacturer Vishay
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-220-1
- Released Date Aug 14, 2021
- Last Modified Date Dec 2, 2023 6:29 AM UTC
- Pinout / Pin List Click Here (Member Only)
SIHP15N50E-BE3 Details
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Manufacturer Part Number:
SIHP15N50E-BE3
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Factory Lead Time:
20 Weeks
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Manufacturer:
Vishay Intertechnologies
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YTEOL:
6
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Avalanche Energy Rating (Eas):
136 mJ
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
500 V
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Drain Current-Max (ID):
14.5 A
SIHP15N50E-BE3 Frequently Asked Questions (FAQs)
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The recommended PCB footprint for SIHP15N50E-BE3 is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
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Yes, SIHP15N50E-BE3 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times. However, it's essential to consider the device's parasitic capacitances and inductances in the design.
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To ensure reliable operation of SIHP15N50E-BE3 in high-temperature environments, it's essential to consider the device's thermal management. This includes providing adequate heat sinking, using a thermal interface material, and ensuring that the device is operated within its specified temperature range.
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The maximum allowed voltage transient for SIHP15N50E-BE3 is 50% above the maximum rated voltage (500V) for a duration of less than 10ms. Exceeding this limit may damage the device.
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Yes, SIHP15N50E-BE3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive signals are properly synchronized to prevent uneven current sharing.
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SIHP15N50E-BE3 Overview
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