SIHR080N60E-T1-GE3 - Vishay

SIHR080N60E-T1-GE3 Details

• Manufacturer Part Number:

  SIHR080N60E-T1-GE3

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Reach Compliance Code:

  Unknown

• ECCN Code:

  EAR99

• Manufacturer:

  Vishay Intertechnologies

• YTEOL:

  7

• Avalanche Energy Rating (Eas):

  173 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

• DS Breakdown Voltage-Min:

  600 V

• Drain Current-Max (ID):

  51 A

• Drain-source On Resistance-Max:

  0.084 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  6 pF

• JESD-30 Code:

  R-PDSO-G8

• Number of Elements:

  1

• Number of Terminals:

  8

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  150 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  SMALL OUTLINE

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  500 W

• Pulsed Drain Current-Max (IDM):

  96 A

• Surface Mount:

  YES

• Terminal Form:

  GULL WING

• Terminal Position:

  DUAL

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON

• Turn-off Time-Max (toff):

  136 ns

• Turn-on Time-Max (ton):

  206 ns