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SIJ482DP-T1-GE3 - Vishay

Description: Vishay SIJ482DP-T1-GE3 N-channel MOSFET Transistor, 60 A, 80 V, 5-Pin PowerPAK SO-8L

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SIJ482DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIJ482DP-T1-GE3-3
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SIJ482DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIJ482DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    60 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Number of Elements:

    1

  • Operating Temperature-Max:

    150 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    69.4 W

  • Surface Mount:

    YES

SIJ482DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIJ482DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for QFN and DFN Packages' (document number 28353).
  • The thermal pad on the bottom of the SIJ482DP-T1-GE3 should be connected to a solid ground plane on the PCB to ensure optimal thermal performance. A thermal via array can be used to connect the thermal pad to the ground plane.
  • The maximum operating temperature range for the SIJ482DP-T1-GE3 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's power handling capabilities at higher temperatures to ensure reliable operation.
  • Yes, the SIJ482DP-T1-GE3 is qualified to AEC-Q101 standards, making it suitable for automotive and high-reliability applications. However, it's essential to consult with Vishay Intertechnologies' application engineers to ensure the device meets the specific requirements of your application.
  • Follow the recommended soldering profile and guidelines outlined in the Vishay Intertechnologies' application note 'Soldering Guidelines for QFN and DFN Packages' (document number 28354).

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