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SIJA22DP-T1-GE3 - Vishay

Description: N-Channel 25 V 64A (Ta), 201A (Tc) 4.8W (Ta), 48W (Tc) Surface Mount PowerPAK® SO-8

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SIJA22DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIJA22DP-T1-GE3-1
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SIJA22DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIJA22DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    201 A

  • Drain-source On Resistance-Max:

    0.0014 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    202 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    110 ns

  • Turn-on Time-Max (ton):

    240 ns

SIJA22DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIJA22DP-T1-GE3 is a pad layout with a minimum size of 1.3 mm x 0.8 mm, with a 0.5 mm spacing between pads. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended derating curves, keep the junction temperature below 150°C, and ensure proper thermal management, such as using a heat sink or thermal interface material. Additionally, consider using a thermally conductive PCB material and optimizing the PCB design for thermal performance.
  • The maximum allowed voltage for the SIJA22DP-T1-GE3 is 120% of the rated voltage, which is 22 V. However, it's recommended to operate the device within the specified voltage range to ensure reliability and prevent damage.
  • Yes, the SIJA22DP-T1-GE3 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the PCB design is optimized for high-frequency operation.
  • To handle the SIJA22DP-T1-GE3's ESD sensitivity, follow proper ESD handling procedures, such as using an ESD wrist strap, ESD mat, or ESD bag. Ensure that all equipment and tools used during assembly are ESD-safe, and consider using ESD-protective packaging for storage and shipping.

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SIJA22DP-T1-GE3 Overview

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