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SIJA58ADP-T1-GE3 - Vishay

Description: MOSFET 40V Vds; 20/-16V Vgs PowerPAK SO-8L

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SIJA58ADP-T1-GE3 - Vishay PCB footprint - Other - Other - SIJA58ADP-T1-GE3-1
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SIJA58ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SIJA58ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-09-17

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    109 A

  • Drain-source On Resistance-Max:

    0.00265 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    52 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    56.8 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    80 ns

  • Turn-on Time-Max (ton):

    176 ns

SIJA58ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIJA58ADP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.3mm body size. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-10365.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device, ensure proper thermal management, and consider using a thermally conductive pad or heat sink to dissipate heat. Additionally, consult Vishay's application notes and reliability reports for more information.
  • Yes, the SIJA58ADP-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rating.
  • To handle the ESD sensitivity of the SIJA58ADP-T1-GE3, follow proper ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that all personnel handling the devices are trained in ESD handling and that the devices are stored in ESD-safe containers.
  • The recommended soldering profile for the SIJA58ADP-T1-GE3 is a standard SMD reflow profile with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Consult Vishay's application notes and soldering guidelines for more information.

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SIJA58ADP-T1-GE3 Overview

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