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SIJA72ADP-T1-GE3 - Vishay

Description: VISHAY - SIJA72ADP-T1-GE3 - Power MOSFET, N Channel, 40 V, 96 A, 0.00285 ohm, PowerPAK SO, Surface Mount

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SIJA72ADP-T1-GE3 - Vishay PCB footprint - Other - Other - SIJA72ADP-T1-GE3-1
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SIJA72ADP-T1-GE3 Details

  • Manufacturer Part Number:

    SIJA72ADP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-07-08

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    96 A

  • Drain-source On Resistance-Max:

    0.00478 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    19 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    56.8 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    98 ns

  • Turn-on Time-Max (ton):

    360 ns

SIJA72ADP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for SIJA72ADP-T1-GE3 is a standard SOT23-6 package with a 1.8mm x 1.4mm body size. A recommended land pattern is available in the Vishay Intertechnologies' application note AN-10365.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device, and ensure proper thermal management, such as using a heat sink or thermal pad, to keep the junction temperature below the maximum rated value of 150°C.
  • Yes, the SIJA72ADP-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rated frequency.
  • To protect the SIJA72ADP-T1-GE3 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing.
  • The recommended soldering profile for the SIJA72ADP-T1-GE3 is a peak temperature of 260°C for 10 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. Refer to the Vishay Intertechnologies' application note AN-10365 for more detailed information.

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SIJA72ADP-T1-GE3 Overview

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