Part Image

SIJA74DP-T1-GE3 - Vishay

Description: MOSFET N-CHANNEL 40V (D-S) 150C MOSFET

Download SIJA74DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SIJA74DP-T1-GE3 - Vishay PCB footprint - Other - Other - SIJA74DP-T1-GE3-2
click to zoom

SIJA74DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIJA74DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SO-8L, 4 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2020-03-21

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    81.2 A

  • Drain-source On Resistance-Max:

    0.00399 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    46.2 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    60 ns

  • Turn-on Time-Max (ton):

    160 ns

SIJA74DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIJA74DP-T1-GE3 is a standard SOT23-3L package with a 1.3mm x 1.3mm body size. The recommended land pattern is available in the Vishay Intertechnologies' packaging information document.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines for the device, ensure proper thermal management, and consider using a thermally conductive pad or heat sink to dissipate heat. Additionally, consult with Vishay Intertechnologies' application notes and reliability reports for more information.
  • Yes, the SIJA74DP-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • To protect the SIJA74DP-T1-GE3 from ESD, follow standard ESD handling procedures, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment. Additionally, consider using ESD protection devices, such as TVS diodes, in the application circuit.
  • The recommended soldering profile for the SIJA74DP-T1-GE3 is a standard reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Consult with Vishay Intertechnologies' packaging information document for more detailed soldering profile recommendations.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIJA74DP-T1-GE3 Overview

Use the download button to access the SIJA74DP-T1-GE3 schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like SIJA7, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIJA74DP-T1-GE3

Showing 0 results