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SIJH600E-T1-GE3 - Vishay

Description: N-Channel 60 V (D-S) 175 ?C MOSFET

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SIJH600E-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK®-8 x 8L Single
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SIJH600E-T1-GE3 Details

  • Manufacturer Part Number:

    SIJH600E-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    320 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    373 A

  • Drain-source On Resistance-Max:

    0.00092 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    78 pF

  • JESD-30 Code:

    R-PSSO-G4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    333 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    140 ns

  • Turn-on Time-Max (ton):

    100 ns

SIJH600E-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIJH600E-T1-GE3 is a pad size of 2.5 mm x 1.5 mm with a 1.5 mm x 1.5 mm thermal pad. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal interface resistance.
  • To ensure reliability in high-temperature applications, it's crucial to follow the recommended operating temperature range (up to 175°C) and to provide adequate heat sinking. Additionally, ensure that the device is soldered correctly, and the PCB is designed to minimize thermal stress.
  • The maximum allowed voltage derating for the SIJH600E-T1-GE3 is 80% of the rated voltage at high temperatures (above 150°C). This derating is necessary to prevent thermal runaway and ensure the device's reliability.
  • Yes, you can use multiple SIJH600E-T1-GE3 devices in parallel to increase current handling. However, it's essential to ensure that the devices are properly matched, and the PCB is designed to minimize current imbalance and thermal mismatch.
  • The recommended storage condition for the SIJH600E-T1-GE3 is to store the devices in a dry, cool place with a relative humidity of 50% or less. It's also recommended to store the devices in their original packaging or in a moisture-proof bag to prevent moisture absorption.

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SIJH600E-T1-GE3 Overview

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