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SIR122DP-T1-RE3 - Vishay

Description: N-Channel 80 V 16.7A (Ta), 59.6A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8

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SIR122DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR122DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-08-19

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    59.6 A

  • Drain-source On Resistance-Max:

    0.009 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12.5 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    65.7 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    52 ns

  • Turn-on Time-Max (ton):

    38 ns

SIR122DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIR122DP-T1-RE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • Yes, the SIR122DP-T1-RE3 is a high-reliability device, suitable for use in critical applications, such as aerospace, defense, and medical devices, due to its high-quality materials and manufacturing process.
  • Handle the SIR122DP-T1-RE3 by the body, avoiding touching the leads or the chip. Use anti-static wrist straps, mats, or other ESD protection devices to prevent electrostatic discharge damage.
  • The maximum allowable voltage derating for the SIR122DP-T1-RE3 is 80% of the rated voltage, to ensure reliable operation and prevent premature failure.
  • Yes, the SIR122DP-T1-RE3 is rated for operation up to 150°C, making it suitable for use in high-temperature environments, such as automotive, industrial, and aerospace applications.

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SIR122DP-T1-RE3 Overview

Use the download button to access the SIR122DP-T1-RE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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