HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
5.3
Avalanche Energy Rating (Eas):
125 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
40 A
Drain-source On Resistance-Max:
0.0023 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-PDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
83 W
Pulsed Drain Current-Max (IDM):
80 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Matte Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIR158DP-T1-GE3 Frequently Asked Questions (FAQs)
The recommended storage condition for SIR158DP-T1-GE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
Yes, SIR158DP-T1-GE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
During soldering, ensure the component is exposed to a maximum temperature of 260°C for 10 seconds or less, and use a soldering iron with a temperature range of 200°C to 240°C.
Yes, SIR158DP-T1-GE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
For optimal performance, it is recommended to use a PCB layout with a solid ground plane, minimal track length, and a via-in-pad design to reduce parasitic inductance.
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System Verified
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SIR158DP-T1-GE3 Overview
Use the download button to access the SIR158DP-T1-GE3 schematic symbol and PCB footprint.
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