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SIR166DP-T1-GE3 - Vishay

Description: MOSFET 30V Vds 20V Vgs PowerPAK SO-8

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SIR166DP-T1-GE3 - Vishay PCB footprint - Other - Other - Power PAK® SO-8 Single_1
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3D Models
SIR166DP-T1-GE3 - Vishay  - 3D model - Other - Power PAK® SO-8 Single_1
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SIR166DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR166DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    48 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR166DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR166DP-T1-GE3 is a rectangular pad with a size of 2.5 mm x 1.5 mm, with a 0.5 mm radius corner and a 0.3 mm spacing between pads.
  • Yes, the SIR166DP-T1-GE3 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated and that the application meets the specified thermal requirements.
  • To ensure reliability in high-humidity environments, it's recommended to follow proper storage and handling procedures, use a moisture-resistant coating or conformal coating, and ensure that the device is properly soldered and sealed.
  • The recommended soldering profile for the SIR166DP-T1-GE3 is a peak temperature of 260°C, with a dwell time of 10-30 seconds. It's essential to follow the recommended soldering profile to prevent damage to the device.
  • Yes, the SIR166DP-T1-GE3 is AEC-Q101 qualified, making it suitable for use in automotive applications. However, it's essential to ensure that the device meets the specific requirements of the application and that it's properly qualified and validated.

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SIR166DP-T1-GE3 Overview

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