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SIR170DP-T1-RE3 - Vishay

Description: MOSFET N-Channel 100 V (D-S) MOSFET

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SIR170DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO -8 Single_1
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SIR170DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR170DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2019-05-16

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    61.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    95 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    102 ns

  • Turn-on Time-Max (ton):

    38 ns

SIR170DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIR170DP-T1-RE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Yes, the SIR170DP-T1-RE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
  • To prevent damage during assembly, handle the SIR170DP-T1-RE3 by the body, avoid touching the leads or the component's surface, and use anti-static wrist straps or mats to prevent electrostatic discharge (ESD).
  • The maximum allowable power dissipation for the SIR170DP-T1-RE3 is 1.5 W at an ambient temperature of 25°C. However, this value may vary depending on the specific application and operating conditions.
  • The SIR170DP-T1-RE3 is rated for operation up to 150°C. However, it's essential to derate the component's power dissipation and consider the thermal resistance and junction temperature to ensure reliable operation in high-temperature environments.

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