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SIR182DP-T1-RE3 - Vishay

Description: Trans MOSFET N-CH 60V 117A 8-Pin PowerPAK SO EP T/R

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SIR182DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR182DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    61.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    117 A

  • Drain-source On Resistance-Max:

    0.0028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR182DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIR182DP-T1-RE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Yes, the SIR182DP-T1-RE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
  • To prevent damage during assembly, handle the SIR182DP-T1-RE3 by the body, avoid touching the leads or electrical contacts, and use anti-static wrist straps or mats to prevent electrostatic discharge (ESD).
  • The maximum allowable power dissipation for the SIR182DP-T1-RE3 is dependent on the operating temperature and other environmental factors. Refer to the datasheet for specific power dissipation ratings and thermal resistance values.
  • The SIR182DP-T1-RE3 is rated for operation up to 150°C. However, it's essential to consider the component's power dissipation, thermal resistance, and other environmental factors to ensure reliable operation in high-temperature environments.

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SIR182DP-T1-RE3 Overview

Use the download button to access the SIR182DP-T1-RE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR18, or try a keyword search, such as Power Field-Effect Transistors

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