Part Image

SIR184DP-T1-RE3 - Vishay

Description: MOSFET 60V Vds 20V Vgs PowerPAK SO-8

Download SIR184DP-T1-RE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SIR184DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
click to zoom
3D Models
SIR184DP-T1-RE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
click to zoom

SIR184DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR184DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    73 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    22 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    5 W

  • Power Dissipation-Max (Abs):

    62.5 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    52 ns

  • Turn-on Time-Max (ton):

    34 ns

SIR184DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIR184DP-T1-RE3 is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • Yes, SIR184DP-T1-RE3 is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
  • During soldering, ensure the component is exposed to a maximum temperature of 260°C for 10 seconds or less, and use a soldering iron with a temperature range of 200°C to 240°C.
  • Yes, SIR184DP-T1-RE3 is compatible with lead-free soldering processes, making it suitable for RoHS-compliant designs.
  • For optimal performance, it is recommended to use a PCB layout with a solid ground plane, minimal track length, and a via-in-pad design to reduce parasitic inductance.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIR184DP-T1-RE3 Overview

Use the download button to access the SIR184DP-T1-RE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR18, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIR184DP-T1-RE3

Showing 0 results