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SIR186DP-T1-RE3 - Vishay

Description: Trans MOSFET N-CH 60V 23A 8-Pin PowerPAK SO EP T/R

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SIR186DP-T1-RE3 - Vishay - PCB symbol
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PCB Footprints
SIR186DP-T1-RE3 - Vishay PCB footprint - Other - Other - SIR186DP-T1-RE3-2
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SIR186DP-T1-RE3 - Vishay - 3D model - Other - SIR186DP-T1-RE3-2
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SIR186DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR186DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    31.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    29 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    46 ns

  • Turn-on Time-Max (ton):

    64 ns

SIR186DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR186DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure reliability in high-temperature applications, it is essential to follow the recommended derating guidelines for the SIR186DP-T1-RE3. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • Vishay Intertechnologies recommends following the ESD protection guidelines outlined in the JEDEC standard JESD625-A. Additionally, consider using ESD protection devices, such as TVS diodes, to protect the SIR186DP-T1-RE3 from electrostatic discharge.
  • Yes, the SIR186DP-T1-RE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • The recommended soldering conditions for the SIR186DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Soldering Recommendations for Vishay's Power MOSFETs' (document number: 41552).

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SIR186DP-T1-RE3 Overview

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