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SIR401DP-T1-GE3 - Vishay

Description: P-Channel 20 V 50A (Tc) 5W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8

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SIR401DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR401DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR401DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SIR401DP-T1-GE3 is available in the Vishay Intertechnologies' website, under the 'Packaging' section. It provides a detailed layout and dimension guide for proper PCB design and assembly.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines provided in the datasheet. Additionally, consider using a thermal interface material (TIM) to improve heat dissipation, and ensure proper PCB design and thermal management.
  • The maximum allowable voltage for the SIR401DP-T1-GE3 is 100 V, as specified in the datasheet. Exceeding this voltage may result in device damage or failure.
  • Yes, the SIR401DP-T1-GE3 is suitable for high-frequency applications. However, it's essential to consider the device's parasitic inductance and capacitance, as well as the PCB layout and design, to minimize signal degradation and ensure optimal performance.
  • The typical lead time for SIR401DP-T1-GE3 may vary depending on the region, distributor, and availability. It's recommended to check with authorized distributors or Vishay Intertechnologies' website for the most up-to-date lead time information.

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SIR401DP-T1-GE3 Overview

Use the download button to access the SIR401DP-T1-GE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR40, or try a keyword search, such as Power Field-Effect Transistors

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