Part Image

SIR403EDP-T1-GE3 - Vishay

Description: MOSFET -30V Vds 25V Vgs PowerPAK SO-8

Download SIR403EDP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SIR403EDP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_2022-2
click to zoom
3D Models
SIR403EDP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_2022-2
click to zoom

SIR403EDP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR403EDP-T1-GE3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR403EDP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR403EDP-T1-GE3 is a rectangle with dimensions of 2.5 mm x 1.3 mm, with a thermal pad size of 2.1 mm x 1.1 mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent thermal runaway.
  • To ensure the reliability of the SIR403EDP-T1-GE3 in high-temperature applications, it's crucial to follow the recommended operating temperature range of -55°C to 150°C. Additionally, ensure proper thermal management by providing adequate heat sinking, and avoid exceeding the maximum junction temperature (Tj) of 150°C.
  • The maximum allowed voltage derating for the SIR403EDP-T1-GE3 is 80% of the maximum rated voltage. This means that if the maximum rated voltage is 40V, the maximum allowed voltage derating would be 32V. Exceeding this derating may lead to reduced reliability and potential failure.
  • Yes, the SIR403EDP-T1-GE3 is suitable for high-frequency switching applications due to its low Qrr (reverse recovery charge) and trr (reverse recovery time). However, it's essential to consider the device's maximum switching frequency, which is typically limited by the device's thermal performance and the application's specific requirements.
  • To handle the SIR403EDP-T1-GE3's ESD sensitivity, follow proper ESD handling procedures, such as using ESD-safe workstations, wrist straps, and packaging materials. Ensure that all personnel handling the devices are properly trained in ESD handling and that the devices are stored in ESD-safe containers when not in use.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIR403EDP-T1-GE3 Overview

Use the download button to access the SIR403EDP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR40, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIR403EDP-T1-GE3

Showing 0 results