Part Image

SIR422DP-T1-GE3 - Vishay

Description: Vishay Siliconix SIR422DP-T1-GE3 N-channel MOSFET, 40 A, 40 V, 8-Pin PowerPAK SO

Download SIR422DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SIR422DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8
click to zoom
3D Models
SIR422DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8
click to zoom

SIR422DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR422DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    20.5 A

  • Drain-source On Resistance-Max:

    0.0066 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34.7 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR422DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIR422DP-T1-GE3 is in a dry, cool place, away from direct sunlight, with a temperature range of -40°C to 125°C and humidity below 60%.
  • Yes, the SIR422DP-T1-GE3 is suitable for high-reliability applications due to its robust design, high-quality materials, and rigorous testing procedures. However, it's essential to follow proper design, assembly, and testing guidelines to ensure the component meets the required reliability standards.
  • To prevent damage during assembly, handle the SIR422DP-T1-GE3 by the body, avoid touching the leads or the component's surface, and use anti-static wrist straps or mats to prevent electrostatic discharge (ESD).
  • The maximum allowable voltage derating for the SIR422DP-T1-GE3 is typically 80% of the rated voltage, but this may vary depending on the specific application and environmental conditions. Consult the datasheet and application notes for more information.
  • The SIR422DP-T1-GE3 is rated for operation up to 150°C, but it's essential to consider the component's power dissipation, thermal resistance, and the overall system design to ensure reliable operation in high-temperature environments.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIR422DP-T1-GE3 Overview

Use the download button to access the SIR422DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR42, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIR422DP-T1-GE3

Showing 0 results