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SIR424DP-T1-GE3 - Vishay

Description: Vishay SIR424DP-T1-GE3 N-channel MOSFET Transistor, 23.4 A, 20 V, 8-Pin SOIC

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PCB Footprints
SIR424DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_111
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3D Models
SIR424DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_111
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SIR424DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR424DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT PACKAGE, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    19 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.3

  • Avalanche Energy Rating (Eas):

    61 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    23.4 A

  • Drain-source On Resistance-Max:

    0.0055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    41.7 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR424DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR424DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay Resistors' (document number: 31011).
  • Vishay Intertechnologies recommends following the standard soldering and rework procedures for thick-film resistors, as outlined in the IPC/J-STD-001 and IPC-7721 standards.
  • The maximum allowable voltage for the SIR424DP-T1-GE3 is 200V, as specified in the datasheet. Exceeding this voltage may result in reduced reliability or even failure.
  • The SIR424DP-T1-GE3 is rated for operation up to 155°C. However, it's essential to consider the derating curves and temperature coefficient of resistance (TCR) when designing for high-temperature applications.
  • The SIR424DP-T1-GE3 is classified as MSL 1 (Moisture Sensitivity Level 1), which means it can withstand standard humidity and temperature conditions. However, it's crucial to follow the recommended storage and handling procedures to prevent moisture absorption.

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SIR424DP-T1-GE3 Overview

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