Part Image

SIR426DP-T1-GE3 - Vishay

Description: MOSFET 40V 30A 41.7W 10.5mohm @ 10V

Download SIR426DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SIR426DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8_24
click to zoom
3D Models
SIR426DP-T1-GE3 - Vishay  - 3D model - Other - PowerPAK SO-8_24
click to zoom

SIR426DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR426DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.0105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    41.7 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR426DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR426DP-T1-GE3 is a rectangle with dimensions of 5.0 mm x 2.5 mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult with a PCB design expert to ensure optimal thermal performance.
  • To ensure the SIR426DP-T1-GE3 operates within its SOA, monitor the device's voltage, current, and temperature. Use a thermal management strategy, such as a heat sink or thermal interface material, to keep the junction temperature below 150°C. Also, ensure the device is not exposed to excessive voltage or current stress.
  • The maximum allowed voltage derating for the SIR426DP-T1-GE3 is 80% of the maximum rated voltage. This means that if the maximum rated voltage is 100 V, the maximum allowed voltage derating would be 80 V. However, it's recommended to consult with a design expert to determine the optimal voltage derating for your specific application.
  • The SIR426DP-T1-GE3 is a commercial-grade device, and its use in high-reliability or aerospace applications may require additional testing and qualification. It's recommended to consult with a design expert and the manufacturer to determine the device's suitability for such applications.
  • To handle the SIR426DP-T1-GE3's ESD sensitivity, follow proper ESD handling procedures, such as using ESD-protective packaging, wrist straps, and mats. Ensure that all personnel handling the device are properly grounded, and avoid touching the device's pins or leads.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIR426DP-T1-GE3 Overview

Use the download button to access the SIR426DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR42, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIR426DP-T1-GE3

Showing 0 results