SIR464DP-T1-GE3 footprint, schematic symbol and 3D model by Vishay

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PCB Footprints

SIR464DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_111

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3D Models

SIR464DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_111

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Datasheet Download Datasheet
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Part Number SIR464DP-T1-GE3
Manufacturer Vishay
Pin Count 11
Part Category MOSFET (N-Channel)
Package Category Other
Footprint Name Other - PowerPAK® SO-8 Single_111
Released Date Apr 4, 2020
Last Modified Date Mar 7, 2023 4:10 PM UTC
Pinout / Pin List Click Here (Member Only)

SIR464DP-T1-GE3 Details

Manufacturer Part Number:
SIR464DP-T1-GE3
Rohs Code:
Yes
Part Life Cycle Code:
Not Recommended
Package Description:
HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
80 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
29.5 A
Drain-source On Resistance-Max:
0.0031 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-XDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
69 W
Pulsed Drain Current-Max (IDM):
70 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON

SIR464DP-T1-GE3 Frequently Asked Questions (FAQs)

The recommended land pattern for the SIR464DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's D2PAK and TO-252 Packages' (document number 28353).
To ensure reliability in high-temperature applications, it is essential to follow the recommended derating guidelines for the SIR464DP-T1-GE3. The device should be operated within the specified maximum junction temperature (Tj) of 175°C. Additionally, ensure proper thermal management, such as using a heat sink, to maintain a safe operating temperature.
The maximum allowed voltage for the SIR464DP-T1-GE3 is 100 V. Exceeding this voltage may damage the device or affect its reliability.
Yes, the SIR464DP-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the application's switching frequency does not exceed the device's maximum rated frequency.
To prevent damage during storage and shipping, it is recommended to follow the Electrostatic Discharge (ESD) precautions outlined in the Vishay Intertechnologies' application note 'ESD Protection for Vishay's Discrete Semiconductors' (document number 28354).

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SIR464DP-T1-GE3 - Vishay

SIR464DP-T1-GE3 Details

SIR464DP-T1-GE3 Frequently Asked Questions (FAQs)

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