HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8
ECCN Code:
EAR99
Factory Lead Time:
15 Weeks
Manufacturer:
Vishay Intertechnologies
YTEOL:
3
Avalanche Energy Rating (Eas):
45 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
30 V
Drain Current-Max (ID):
28 A
Drain-source On Resistance-Max:
0.0035 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code:
R-XDSO-C5
JESD-609 Code:
e3
Moisture Sensitivity Level:
1
Number of Elements:
1
Number of Terminals:
5
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
150 °C
Package Body Material:
UNSPECIFIED
Package Shape:
RECTANGULAR
Package Style:
SMALL OUTLINE
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
54 W
Pulsed Drain Current-Max (IDM):
70 A
Qualification Status:
Not Qualified
Surface Mount:
YES
Terminal Finish:
Tin (Sn)
Terminal Form:
C BEND
Terminal Position:
DUAL
Time@Peak Reflow Temperature-Max (s):
30
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
SIR466DP-T1-GE3 Frequently Asked Questions (FAQs)
The recommended PCB footprint for the SIR466DP-T1-GE3 is a rectangle with dimensions of 6.1mm x 3.3mm, with a thermal pad in the center. The datasheet provides a recommended land pattern, but it's essential to consult with a PCB design expert to ensure optimal thermal performance.
To ensure proper soldering, follow the recommended soldering profile: peak temperature of 260°C, with a dwell time of 10-30 seconds above 220°C. Use a solder with a melting point below 220°C, and avoid applying excessive force or vibration during the soldering process.
The maximum allowed voltage derating for the SIR466DP-T1-GE3 is 80% of the maximum rated voltage. This means that if the maximum rated voltage is 100V, the maximum allowed voltage derating would be 80V. However, it's essential to consult the datasheet and application notes for specific derating guidelines.
The SIR466DP-T1-GE3 is rated for operation up to 150°C. However, it's essential to consider the device's power dissipation, thermal resistance, and PCB design to ensure reliable operation in high-temperature environments. Consult the datasheet and application notes for specific guidelines.
To calculate the power dissipation of the SIR466DP-T1-GE3, use the following formula: Pd = (Vin - Vout) x Iout, where Pd is the power dissipation, Vin is the input voltage, Vout is the output voltage, and Iout is the output current. Consult the datasheet for specific values and guidelines.
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SIR466DP-T1-GE3 Overview
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