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SIR474DP-T1-GE3 - Vishay

Description: MOSFETs 30V 20A 29.8W N-Channel 30 V (D-S) MOSFET

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SIR474DP-T1-GE3 - Vishay - PCB symbol
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SIR474DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SIR474DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK SO-8 Single
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SIR474DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR474DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.0095 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    29.8 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR474DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SIR474DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 91000).
  • To ensure reliability, follow the recommended operating conditions, derate the power dissipation according to the temperature, and consider using a heat sink or thermal interface material to maintain a safe junction temperature (Tj) below 150°C.
  • The maximum allowed voltage transient for SIR474DP-T1-GE3 is specified as ±20 V for a duration of ≤100 ns. Exceeding this limit may damage the device.
  • Yes, SIR474DP-T1-GE3 is suitable for high-frequency switching applications. However, ensure that the device is properly driven, and the layout is optimized to minimize parasitic inductance and capacitance.
  • Handle the SIR474DP-T1-GE3 with ESD-protective equipment, follow proper grounding procedures, and consider using ESD-protective packaging and storage materials to prevent damage.

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SIR474DP-T1-GE3 Overview

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