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SIR496DP-T1-GE3 - Vishay

Description: Vishay SIR496DP-T1-GE3 N-channel MOSFET Transistor, 25.7 A, 20 V, 8-Pin SOIC

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SIR496DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIR496DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_111
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3D Models
SIR496DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_111
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SIR496DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR496DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, LEADLESS, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    35 A

  • Drain-source On Resistance-Max:

    0.0045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-XDSO-C5

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    27.7 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR496DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR496DP-T1-GE3 is a 5-pin TO-252 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper thermal management, ensure a good thermal interface between the device and the heat sink, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature of 150°C.
  • The maximum allowed voltage on the gate pin is ±20V, but it's recommended to keep it within ±15V to ensure reliable operation and prevent damage to the device.
  • Yes, the SIR496DP-T1-GE3 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and prevent overheating.
  • To protect the SIR496DP-T1-GE3 from ESD, handle the device with an ESD wrist strap or mat, use ESD-safe packaging and storage, and ensure the PCB design includes ESD protection components such as TVS diodes or ESD arrays.

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SIR496DP-T1-GE3 Overview

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