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SIR5607DP-T1-RE3 - Vishay

Description: MOSFET P-Channel 60 V (D-S) MOSFET PowerPAK SO-8, 7 mohm a. 10V, 12 mohm a. 4.5V

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PCB Footprints
SIR5607DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SIR5607DP-T1-RE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SIR5607DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR5607DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    90.9 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    85 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    100 ns

  • Turn-on Time-Max (ton):

    730 ns

SIR5607DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR5607DP-T1-RE3 is a standard QFN 5x5mm package with a 0.5mm pitch. A recommended land pattern can be found in the Vishay Intertechnologies application note 'QFN Land Pattern' (document number 28356).
  • To ensure reliable operation in high-temperature environments, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and keeping the device within its specified operating temperature range (–40°C to 150°C). Additionally, consider using thermal simulation tools to model the device's thermal performance in your specific application.
  • The SIR5607DP-T1-RE3 has built-in ESD protection, but it is still recommended to follow proper ESD handling procedures during assembly and testing. The device can withstand ESD events up to 2 kV according to the Human Body Model (HBM) and 150 V according to the Machine Model (MM).
  • Yes, the SIR5607DP-T1-RE3 is qualified for use in high-reliability and automotive applications. It meets the requirements of the AEC-Q101 standard and is manufactured in accordance with Vishay Intertechnologies' quality and reliability standards.
  • The optimal input capacitor value for the SIR5607DP-T1-RE3 depends on the specific application requirements, such as input voltage, output current, and ripple voltage. A general guideline is to use a capacitor with a value between 4.7 μF and 22 μF, with a voltage rating of at least 25 V. It is recommended to consult the application note 'Input Capacitor Selection for DC-DC Converters' (document number 28358) for more detailed guidance.

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