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SIR570DP-T1-RE3 - Vishay

Description: MOSFET N-CHANNEL 150-V (D-S)

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SIR570DP-T1-RE3 - Vishay PCB footprint - Other - Other - SIR570DP-T1-RE3-1
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SIR570DP-T1-RE3 - Vishay  - 3D model - Other - SIR570DP-T1-RE3-1
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SIR570DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR570DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2020-09-02

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6.2

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    77.4 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    6.5 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    100 ns

  • Turn-on Time-Max (ton):

    66 ns

SIR570DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR570DP-T1-RE3 is a rectangle with dimensions of 2.5 mm x 1.3 mm, with a 0.5 mm radius corner. The pad spacing is 0.65 mm, and the pad size is 1.1 mm x 0.5 mm.
  • To handle thermal management, ensure good thermal conductivity between the device and the PCB by using a thermal pad or thermal interface material. Keep the surrounding components at a safe distance to prevent thermal coupling. A heat sink or thermal vias can also be used to dissipate heat.
  • The maximum operating temperature range for the SIR570DP-T1-RE3 is -55°C to 150°C. However, the device's performance and reliability may degrade if operated at the extreme ends of this range for extended periods.
  • Yes, the SIR570DP-T1-RE3 is designed to withstand vibrations up to 10 G peak acceleration. However, it's essential to ensure proper PCB mounting and secure the device to prevent mechanical stress and damage.
  • To prevent EOS, ensure that the device is operated within the recommended voltage and current ratings. Use proper PCB layout and routing to minimize electromagnetic interference (EMI) and radio-frequency interference (RFI). Implement overvoltage protection and surge protection devices if necessary.

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SIR570DP-T1-RE3 Overview

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