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SIR580DP-T1-RE3 - Vishay

Description: N-Channel 80 V 35.8A (Ta), 146A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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SIR580DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single
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SIR580DP-T1-RE3 - Vishay  - 3D model - Other - PowerPAK SO-8 Single
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SIR580DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR580DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2020-09-08

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    146 A

  • Drain-source On Resistance-Max:

    0.0032 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    70 ns

  • Turn-on Time-Max (ton):

    66 ns

SIR580DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR580DP-T1-RE3 is a 5-pin TO-252 package with a minimum pad size of 1.5 mm x 2.5 mm and a maximum pad size of 2.5 mm x 3.5 mm, with a 0.5 mm spacing between pads.
  • To ensure reliability in high-temperature applications, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and keeping the device within its recommended operating temperature range (up to 150°C).
  • The maximum allowed voltage transient for the SIR580DP-T1-RE3 is ±20 V, with a maximum duration of 100 ms. Exceeding this limit may damage the device or affect its reliability.
  • Yes, you can use multiple SIR580DP-T1-RE3 devices in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients.
  • The recommended storage condition for the SIR580DP-T1-RE3 is in a dry, cool place with a relative humidity of 50% or less, and a temperature range of 5°C to 30°C. It's also recommended to store the devices in their original packaging or in a moisture-proof bag.

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SIR580DP-T1-RE3 Overview

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