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SIR584DP-T1-RE3 - Vishay

Description: MOSFET N-CH 80-V MSFT

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SIR584DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR584DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    61.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    83.3 W

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    72 ns

  • Turn-on Time-Max (ton):

    78 ns

SIR584DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the SIR584DP-T1-RE3 is a 5-pin PowerPAK SO-8 package with a minimum pad size of 1.3 mm x 1.3 mm and a maximum pad size of 1.5 mm x 1.5 mm, with a 0.5 mm spacing between pads.
  • To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal design and layout guidelines, including providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance between the device and the heat sink.
  • The maximum allowed voltage transient for the SIR584DP-T1-RE3 is ±20% of the rated voltage for a duration of less than 100 ms, with a maximum of 10 transients per hour.
  • Yes, the SIR584DP-T1-RE3 can be used in a parallel configuration to increase current capability, but it is essential to ensure that the devices are properly matched and that the layout and thermal design are optimized to minimize current imbalance and thermal gradients.
  • The recommended ESD protection for the SIR584DP-T1-RE3 is to follow the IEC 61000-4-2 standard, which recommends using ESD protection devices with a minimum rating of ±2 kV for contact discharge and ±4 kV for air discharge.

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SIR584DP-T1-RE3 Overview

Use the download button to access the SIR584DP-T1-RE3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR58, or try a keyword search, such as Power Field-Effect Transistors

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