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SIR622DP-T1-RE3 - Vishay

Description: N-Channel 150 V 12.6A (Ta), 51.6A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

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SIR622DP-T1-RE3 - Vishay - PCB symbol
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SIR622DP-T1-RE3 - Vishay PCB footprint - Other - Other - SIR622DP-T1-RE3-2
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SIR622DP-T1-RE3 - Vishay - 3D model - Other - SIR622DP-T1-RE3-2
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SIR622DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR622DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    51.6 A

  • Drain-source On Resistance-Max:

    0.0177 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10.5 pF

  • JESD-30 Code:

    R-PDSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    48 ns

  • Turn-on Time-Max (ton):

    37 ns

SIR622DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR622DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material. Additionally, ensure good airflow around the device and avoid blocking the heat sink's airflow path.
  • The maximum allowed voltage transient for the SIR622DP-T1-RE3 is specified in the datasheet as ±20 V for a duration of ≤ 100 ns. Exceeding this limit may damage the device.
  • The SIR622DP-T1-RE3 is a commercial-grade device, not specifically designed for high-reliability or aerospace applications. For such applications, consider using devices with a higher qualification level, such as those meeting the requirements of MIL-PRF-19500 or ESCC 9000.
  • Handle the SIR622DP-T1-RE3 with ESD-protective equipment and follow proper ESD-handling procedures to prevent damage. Ensure that your manufacturing and assembly processes also follow ESD-safe practices.

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SIR622DP-T1-RE3 Overview

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