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SIR626DP-T1-RE3 - Vishay

Description: Vishay SIR626DP-T1-RE3 N-channel MOSFET, 100 A, 60 V TrenchFET, 8-Pin SO

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SIR626DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR626DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • Reach Compliance Code:

    Unknown

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.002 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    78 ns

  • Turn-on Time-Max (ton):

    88 ns

SIR626DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR626DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for SIR626DP-T1-RE3' or by consulting with a Vishay representative.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines in the datasheet, and consider using a thermal interface material to improve heat dissipation. Additionally, consult with a Vishay representative for specific guidance on high-temperature applications.
  • The maximum allowed voltage transient for the SIR626DP-T1-RE3 is specified in the datasheet as 80 V for a duration of ≤ 100 ns. For transients exceeding these limits, consult with a Vishay representative for guidance on custom testing and validation.
  • Yes, the SIR626DP-T1-RE3 is suitable for high-frequency switching applications. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation. Consult with a Vishay representative for guidance on specific application requirements.
  • Follow the recommended storage and handling procedures outlined in the Vishay Intertechnologies' document 'Moisture Sensitivity and Storage of Semiconductor Devices' to prevent damage and ensure the reliability of the SIR626DP-T1-RE3.

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