Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SIR664DP-T1-GE3 - Vishay

Description: N-Channel 60 V (D-S) MOSFET

Download SIR664DP-T1-GE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SIR664DP-T1-GE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SIR664DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1
click to zoom
3D Models
SIR664DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1
click to zoom

SIR664DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR664DP-T1-GE3

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    20 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Surface Mount:

    YES

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR664DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SIR664DP-T1-GE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure reliability in high-temperature applications, it is essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow. Additionally, the device should be operated within its specified temperature range and derated accordingly.
  • Vishay Intertechnologies recommends following the ESD protection guidelines outlined in the JEDEC standard JESD625-A, which includes handling and storage precautions, as well as the use of ESD-protective packaging and materials.
  • Yes, the SIR664DP-T1-GE3 is suitable for high-frequency switching applications. However, it is essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's specified range.
  • The recommended gate drive voltage for SIR664DP-T1-GE3 is between 4.5V and 10V, with a typical value of 5V. However, the optimal gate drive voltage may vary depending on the specific application and switching requirements.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIR664DP-T1-GE3 Overview

Use the download button to access the SIR664DP-T1-GE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR66, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIR664DP-T1-GE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑