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SIR668ADP-T1-RE3 - Vishay

Description: VISHAY - SIR668ADP-T1-RE3 - MOSFET, N-CH, 100V, 93.6A, 150DEG C

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SIR668ADP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1-1
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SIR668ADP-T1-RE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_1-1
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SIR668ADP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR668ADP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Date Of Intro:

    2018-03-26

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.9

  • Avalanche Energy Rating (Eas):

    61.2 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    93.6 A

  • Drain-source On Resistance-Max:

    0.0048 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR668ADP-T1-RE3 Frequently Asked Questions (FAQs)

  • Store the device in a dry, cool place, away from direct sunlight and moisture. The recommended storage temperature range is -40°C to 125°C.
  • Yes, SIR668ADP-T1-RE3 is designed for high-reliability applications, including automotive, industrial, and medical devices. It meets the requirements of AEC-Q101 and is qualified for use in harsh environments.
  • Handle the device by the body or the leads, avoiding touching the glass passivation layer or the metallization. Use anti-static wrist straps, mats, or floors to prevent electrostatic discharge (ESD) damage.
  • The recommended soldering profile is a peak temperature of 260°C for 10 seconds, with a ramp-up rate of 3°C/s and a ramp-down rate of 6°C/s. Ensure the device is not exposed to temperatures above 260°C for more than 10 seconds.
  • Yes, SIR668ADP-T1-RE3 is suitable for high-frequency applications up to 1 GHz. However, the device's performance may degrade at higher frequencies due to parasitic inductance and capacitance.

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SIR668ADP-T1-RE3 Overview

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