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SIR680DP-T1-RE3 - Vishay

Description: Vishay SIR680DP-T1-RE3 N-channel MOSFET, 100 A, 80 V TrenchFET, 8-Pin SO

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SIR680DP-T1-RE3 - Vishay - PCB symbol
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PCB Footprints
SIR680DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_1
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3D Models
SIR680DP-T1-RE3 - Vishay - 3D model - Other - PowerPAK® SO-8 Single_1
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SIR680DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR680DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    80 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR680DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR680DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for SIR680DP-T1-RE3' or by contacting Vishay's technical support team.
  • To ensure reliability in high-temperature applications, follow the recommended derating guidelines in the datasheet, and consider using a thermal interface material (TIM) to improve heat dissipation. Additionally, ensure proper PCB design and thermal management to minimize thermal stress.
  • The maximum allowed voltage transient for the SIR680DP-T1-RE3 is specified in the datasheet as 80 V for a duration of ≤ 100 ns. Exceeding this limit may compromise the device's reliability.
  • Yes, the SIR680DP-T1-RE3 is suitable for high-frequency switching applications. However, ensure that the device is properly bypassed and decoupled to minimize ringing and electromagnetic interference (EMI).
  • To handle power dissipation in high-current applications, ensure proper heat sinking, use a thermally conductive PCB material, and consider using a heat sink or thermal interface material (TIM) to improve heat dissipation.

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SIR680DP-T1-RE3 Overview

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