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SIR681DP-T1-RE3 - Vishay

Description: P-Channel 80 V (D-S) MOSFET

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SIR681DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8 Single_.H=1.12mm
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SIR681DP-T1-RE3 - Vishay  - 3D model - Other - PowerPAK® SO-8 Single_.H=1.12mm
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SIR681DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR681DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Date Of Intro:

    2020-10-01

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5.85

  • Avalanche Energy Rating (Eas):

    125 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    80 V

  • Drain Current-Max (ID):

    71.9 A

  • Drain-source On Resistance-Max:

    0.0167 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    125 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    112 ns

  • Turn-on Time-Max (ton):

    54 ns

SIR681DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for the SIR681DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay Power MOSFETs' (document number: 41551).
  • To ensure proper cooling, follow the thermal management guidelines in the datasheet, and consider using a heat sink with a thermal interface material. Additionally, ensure good airflow around the device and avoid blocking the heat sink's airflow path.
  • The maximum allowed voltage transient for the SIR681DP-T1-RE3 is not explicitly stated in the datasheet. However, as a general guideline, it's recommended to limit voltage transients to 10-20% above the maximum rated voltage to ensure device reliability.
  • Yes, the SIR681DP-T1-RE3 is suitable for high-frequency switching applications. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the application's switching frequency is within the device's recommended operating range.
  • To protect the SIR681DP-T1-RE3 from ESD, follow proper handling and storage procedures, such as using anti-static bags, wrist straps, and mats. Additionally, ensure that the device is properly grounded during assembly and testing.

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