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SIR688DP-T1-GE3 - Vishay

Description: MOSFET 60V Vds 20V Vgs PowerPAK SO-8

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SIR688DP-T1-GE3 - Vishay - PCB symbol
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PCB Footprints
SIR688DP-T1-GE3 - Vishay PCB footprint - Other - Other - PowerPAK® SO-8
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3D Models
SIR688DP-T1-GE3 - Vishay - 3D model - Other - PowerPAK® SO-8
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SIR688DP-T1-GE3 Details

  • Manufacturer Part Number:

    SIR688DP-T1-GE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    29 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    45 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.0035 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-C5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    C BEND

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

SIR688DP-T1-GE3 Frequently Asked Questions (FAQs)

  • The recommended storage condition for SIR688DP-T1-GE3 is in a dry, cool place with a temperature range of 20°C to 30°C (68°F to 86°F) and humidity below 60%.
  • While SIR688DP-T1-GE3 is suitable for high-frequency applications, its performance may degrade above 100 kHz. It's recommended to consult with a Vishay Intertechnologies representative or perform thorough testing to ensure suitability for your specific application.
  • To prevent electrostatic discharge (ESD) damage, handle SIR688DP-T1-GE3 components in an ESD-protected environment, use ESD-protective packaging, and follow proper grounding procedures during assembly and installation.
  • The recommended soldering profile for SIR688DP-T1-GE3 is a peak temperature of 260°C (500°F) for 10 seconds, with a ramp-up rate of 3°C/s (5.4°F/s) and a ramp-down rate of 6°C/s (10.8°F/s).
  • While SIR688DP-T1-GE3 meets the requirements for automotive applications, it's essential to consult with a Vishay Intertechnologies representative to ensure compliance with specific automotive industry standards and regulations.

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SIR688DP-T1-GE3 Overview

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