Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SIR692DP-T1-RE3 - Vishay

Description: Vishay SIR692DP-T1-RE3 N-channel MOSFET, 24.2 A, 250 V, 8-Pin SO

Download SIR692DP-T1-RE3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SIR692DP-T1-RE3 - Vishay - PCB symbol
click to zoom
PCB Footprints
SIR692DP-T1-RE3 - Vishay PCB footprint - Other - Other - PowerPAK SO-8 Single_2022
click to zoom
3D Models
SIR692DP-T1-RE3 - Vishay - 3D model - Other - PowerPAK SO-8 Single_2022
click to zoom

SIR692DP-T1-RE3 Details

  • Manufacturer Part Number:

    SIR692DP-T1-RE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2017-03-22

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    11.25 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    24.2 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9.3 pF

  • JESD-30 Code:

    R-PDSO-F5

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    5

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    104 W

  • Pulsed Drain Current-Max (IDM):

    50 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    92 ns

  • Turn-on Time-Max (ton):

    78 ns

SIR692DP-T1-RE3 Frequently Asked Questions (FAQs)

  • The recommended land pattern for SIR692DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Land Pattern Recommendations for Vishay's Power MOSFETs' (document number: 41551).
  • To ensure reliability in high-temperature applications, it's essential to follow the recommended derating guidelines for the SIR692DP-T1-RE3. Additionally, consider using a thermal interface material (TIM) to improve heat transfer between the device and the heat sink.
  • To prevent electrostatic discharge (ESD) damage, handle the SIR692DP-T1-RE3 in an ESD-protected environment, wear an ESD wrist strap or use an ESD mat, and avoid touching the device's pins or leads.
  • Yes, the SIR692DP-T1-RE3 can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal mismatch.
  • The recommended gate drive circuits for the SIR692DP-T1-RE3 can be found in the Vishay Intertechnologies' application note 'Gate Drive Circuits for Power MOSFETs' (document number: 41552).

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SIR692DP-T1-RE3 Overview

Use the download button to access the SIR692DP-T1-RE3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SIR69, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SIR692DP-T1-RE3

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SIR692DP-T1-RE3 Alternates

Showing results

Image Part Number Model
Part Image BSC670N25NSFDATMA1 Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image BSC670N25NSFD Infineon Technologies AG

Power Field-Effect Transistor, 24A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET